R6025FNZ Datasheet and Replacement
Type Designator: R6025FNZ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 2200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-3PF
R6025FNZ substitution
R6025FNZ Datasheet (PDF)
r6025fnz.pdf

R6025FNZ Nch 600V 25A Power MOSFET DatasheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.18WID25A(1) (2) PD150W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead p
r6025fnz1.pdf

R6025FNZ1 Nch 600V 25A Power MOSFET DatasheetlOutlineVDSS600VTO-247RDS(on) (Max.)0.18WID25A(3) PD150W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead pl
r6025anz.pdf

10V Drive Nch MOSFET R6025ANZ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.05) Parallel use is easy. 2.03.00.75 Applications0.9(1)GateSwitching 5.45 5.45(2)Drain(3)Souce
Datasheet: R6020ENX , R6020ENZ , R6020ENZ1 , R6020FNJ , R6024ENJ , R6024ENX , R6024ENZ , R6024ENZ1 , 60N06 , R6025FNZ1 , R6030ENX , R6030ENZ , R6030ENZ1 , R6035ENZ , R6035ENZ1 , R6046ANZ1 , R6046FNZ1 .
History: IPP80N04S3-04 | APT4525AN
Keywords - R6025FNZ MOSFET datasheet
R6025FNZ cross reference
R6025FNZ equivalent finder
R6025FNZ lookup
R6025FNZ substitution
R6025FNZ replacement
History: IPP80N04S3-04 | APT4525AN



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