All MOSFET. R6025FNZ Datasheet

 

R6025FNZ MOSFET. Datasheet pdf. Equivalent


   Type Designator: R6025FNZ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 25 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 2200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-3PF

 R6025FNZ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

R6025FNZ Datasheet (PDF)

 ..1. Size:768K  rohm
 r6025fnz.pdf

R6025FNZ R6025FNZ

R6025FNZ Nch 600V 25A Power MOSFET DatasheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.18WID25A(1) (2) PD150W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead p

 0.1. Size:828K  rohm
 r6025fnz1.pdf

R6025FNZ R6025FNZ

R6025FNZ1 Nch 600V 25A Power MOSFET DatasheetlOutlineVDSS600VTO-247RDS(on) (Max.)0.18WID25A(3) PD150W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead pl

 9.1. Size:249K  rohm
 r6025anz.pdf

R6025FNZ R6025FNZ

10V Drive Nch MOSFET R6025ANZ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.05) Parallel use is easy. 2.03.00.75 Applications0.9(1)GateSwitching 5.45 5.45(2)Drain(3)Souce

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