R6025FNZ1 MOSFET. Datasheet pdf. Equivalent
Type Designator: R6025FNZ1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 25 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 115 nS
Cossⓘ - Output Capacitance: 2200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-247
R6025FNZ1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
R6025FNZ1 Datasheet (PDF)
r6025fnz1.pdf
R6025FNZ1 Nch 600V 25A Power MOSFET DatasheetlOutlineVDSS600VTO-247RDS(on) (Max.)0.18WID25A(3) PD150W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source 4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead pl
r6025fnz.pdf
R6025FNZ Nch 600V 25A Power MOSFET DatasheetlOutlineVDSS600V TO-3PFRDS(on) (Max.)0.18WID25A(1) (2) PD150W(3) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.4) Drive circuits can be simple.*1 BODY DIODE 5) Parallel use is easy.6) Pb-free lead p
r6025anz.pdf
10V Drive Nch MOSFET R6025ANZ Structure Dimensions (Unit : mm) Silicon N-channel MOSFET 5.5TO-3PF3.015.53.6 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. 2.05) Parallel use is easy. 2.03.00.75 Applications0.9(1)GateSwitching 5.45 5.45(2)Drain(3)Souce
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
