All MOSFET. IPU09N03LA Datasheet


IPU09N03LA MOSFET. Datasheet pdf. Equivalent

Type Designator: IPU09N03LA

Marking Code: 09N03LA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 63 W

Maximum Drain-Source Voltage |Vds|: 25 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 10 nC

Rise Time (tr): 5.6 nS

Drain-Source Capacitance (Cd): 474 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0088 Ohm

Package: TO251

IPU09N03LA Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IPU09N03LA Datasheet (PDF)

1.1. ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf Size:413K _update-mosfet


IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA OptiMOS®2 Power-Transistor Product Summary Features V 25 V DS • Ideal for high-frequency dc/dc converters R (SMD version) 8.6 mΩ DS(on),max • Qualified according to JEDEC1) for target application I 50 A D • N-channel, logic level • Excellent gate charge x R product (FOM) DS(on) • Superior thermal resistance • 175 °C

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .


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