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IPU09N03LA Spec and Replacement


   Type Designator: IPU09N03LA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 474 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
   Package: TO251

 IPU09N03LA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IPU09N03LA Specs

 ..1. Size:413K  infineon
 ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf pdf_icon

IPU09N03LA

IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.6 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C ... See More ⇒

 9.1. Size:538K  1
 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf pdf_icon

IPU09N03LA

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low... See More ⇒

Detailed specifications: R9521 , R9522 , 2SJ455 , 2SK0123 , BSC0906NS , IPD09N03LA , IPF09N03LA , IPS09N03LA , IRFP460 , NTD4809NH , NTD4809NHG , SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , RDX060N60FU6 .

Keywords - IPU09N03LA MOSFET specs

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