All MOSFET. SI2300A Datasheet

 

SI2300A MOSFET. Datasheet pdf. Equivalent

Type Designator: SI2300A

Marking Code: C009T

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 7.7 nC

Rise Time (tr): 128 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: SOT23

SI2300A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SI2300A Datasheet (PDF)

1.1. si2300a.pdf Size:2058K _update-mosfet

SI2300A
SI2300A

R UMW UMW SI2300A N-Channel 20-V(D-S) MOSFET UMW SI2300A ID SOT-23 V(BR)DSS RDS(on)MAX 25mΩ@4.5V 20V 6 A 1. GATE 34.5mΩ@2.5V 2. SOURCE 3. DRAIN APPLICATION FEA TURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit C009T Maximum ratings (Ta=25℃ unless otherwise noted) Symbol Value Parameter Unit Dr

4.1. si2300ds.pdf Size:119K _vishay

SI2300A
SI2300A

New Product Si2300DS Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) Qg (Typ.) ID (A) Definition 0.068 at VGS = 4.5 V • TrenchFET® Power MOSFET 3.6a 30 3 nC • 100 % Rg Tested 0.085 at VGS = 2.5 V 3.4 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter for

4.2. si2300.pdf Size:3364K _htsemi

SI2300A
SI2300A

SI2300 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.0A 70m ? RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 80m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter RE

 4.3. si2300.pdf Size:603K _kexin

SI2300A
SI2300A

SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 (KI2300) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V,,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector A

4.4. si2300-3.pdf Size:725K _kexin

SI2300A
SI2300A

SMD Type IC SMD Type MOSFET N-Channel Enhancement MOSFET SI2300 (KI2300) SOT-23-3 Unit: mm +0.2 2.9-0.1 Features +0.1 0.4 -0.1 VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=5.0A 3 VDS=20V,RDS(ON)=60m @VGS=2.5V,ID=4.0A VDS=20V ,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9-0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol R

 4.5. si2300.pdf Size:2425K _shenzhen-tuofeng-semi

SI2300A
SI2300A

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type IC SMD Type MOSFET N-Channel Enhancement Mode Field Effect Transistor SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 3 V DS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A V DS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A V DS=20V,,RDS(ON)=55m @V GS=2.5V,ID=2.0A 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1. Gate 2.Emi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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