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RDX060N60FU6 Specs and Replacement


   Type Designator: RDX060N60FU6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220FM
 

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RDX060N60FU6 Specs

 ..1. Size:60K  rohm
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RDX060N60FU6

RDX060N60 Transistors 10V Drive Nch MOS FET RDX060N60 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TO-220FM 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 2) Low input capacitance. 1.3 3) Excellent resistance to damage from static electricity. 0.8 (1)Gate 2.54 2.54 0.75 2.6 (2)Drain (1) (2) (3) Applications (3)Source Switching Pa... See More ⇒

Detailed specifications: IPU09N03LA , NTD4809NH , NTD4809NHG , SI2300A , SPP07N60C2 , SPB07N60C2 , SPA07N60C2 , RDX050N50FU6 , AO3400 , RDX080N50FU6 , RDX100N60FU6 , RDX120N50FU6 , RE1C001UN , RE1C001ZP , RE1C002UN , RE1C002ZP , RE1E002SP .

History: NTTFS8D1N08H | FDD6637

Keywords - RDX060N60FU6 MOSFET specs

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