RFD7N10LE Specs and Replacement

Type Designator: RFD7N10LE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO251AA

RFD7N10LE substitution

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RFD7N10LE datasheet

 0.1. Size:136K  harris semi
 rfd7n10le-sm rfp7n10le.pdf pdf_icon

RFD7N10LE

RFD7N10LE, RFD7N10LESM S E M I C O N D U C T O R RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB 7A, 100V TOP VIEW rDS(ON) = 0.300 SOURCE 2KV ESD Protected DRAIN DRAIN (FLANGE) Temperature Compensating PSPICE Model GATE Can be Driven Directly fr... See More ⇒

 0.2. Size:101K  intersil
 rfd7n10le-sm.pdf pdf_icon

RFD7N10LE

RFD7N10LE, RFD7N10LESM Data Sheet October 1999 File Number 3598.3 7A, 100V, 0.300 Ohm, N-Channel, Logic Features Level, Power MOSFETs 7A, 100V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.300 a modern process. This process, which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI integrated circuits gives optimum util... See More ⇒

Detailed specifications: RFD3055, RFD3055LE, RFD3055LESM, RFD3055SM, RFD3N08L, RFD3N08LSM, RFD4N06L, RFD4N06LSM, IRFB4110, RFD7N10LESM, RFD8P05, RFD8P05SM, RFD8P06E, RFD8P06ESM, RFD8P06LE, RFD8P06LESM, RFF60P06

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