RF1S70N06 MOSFET Datasheet: N-Ch, 60V, 70A. Full specification with pinout and replacement list

RF1S70N06 Specs and Replacement

Type Designator: RF1S70N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 137 nS

Cossⓘ - Output Capacitance: 792 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO-262AA

RF1S70N06 substitution

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RF1S70N06 datasheet

..1. Size:229K fairchild semi
rfg70n06 rfp70n06 rf1s70n06 rf1s70n06sm.pdf pdf_icon

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs 70A, 60V These are N-Channel power MOSFETs manufactured using rDS(on) = 0.014 the MegaFET process. This process, which uses feature Temperature Compensated PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silic... See More ⇒

..2. Size:227K fairchild semi
rf1s70n06.pdf pdf_icon

6.1. Size:142K intersil
rfp70n03 rf1s70n03sm.pdf pdf_icon

RFP70N03, RF1S70N03SM Data Sheet July 1999 File Number 3404.4 70A, 30V, 0.010 Ohm, N-Channel Power Features MOSFETs 70A, 30V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.010 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili... See More ⇒

Detailed specifications: RE1L002SN, RF1S25N06, RF1S30N06LE, RF1S30P06, RF1S40N10, RF1S540, RF1S60P03, RF1S640, IRF4905, RF1S9540, RF4C050AP, RF4C100BC, RF4E070BN, RF4E070GN, RF4E075AT, RF4E080BN, RF4E080GN