RF4C100BC Datasheet and Replacement
Type Designator: RF4C100BC
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 43 nS
Cossⓘ - Output Capacitance: 320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm
Package: HUML2020L8
RF4C100BC substitution
RF4C100BC Datasheet (PDF)
rf4c100bc.pdf
RF4C100BCDatasheetPch -20V -10A Middle Power MOSFETlOutlinel HUML2020L8VDSS-20VRDS(on)(Max.) 15.6mID 10APD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package(HUML2020L8).3) Pb-free lead plating ; RoHS compliant.4) Halog
Datasheet: RF1S30P06 , RF1S40N10 , RF1S540 , RF1S60P03 , RF1S640 , RF1S70N06 , RF1S9540 , RF4C050AP , SPP20N60C3 , RF4E070BN , RF4E070GN , RF4E075AT , RF4E080BN , RF4E080GN , RF4E110BN , RF4E110GN , RF6E045AJ .
History: WNM2024 | HSCB2307 | RDN120N25 | SFP090N80C2 | NCEP080N10F | IRFR430APBF | STI17NF25
Keywords - RF4C100BC MOSFET datasheet
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History: WNM2024 | HSCB2307 | RDN120N25 | SFP090N80C2 | NCEP080N10F | IRFR430APBF | STI17NF25
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