RF4E110GN MOSFET. Datasheet pdf. Equivalent
Type Designator: RF4E110GN
Marking Code: HG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7.4 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 152 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
Package: HUML2020L8
RF4E110GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RF4E110GN Datasheet (PDF)
rf4e110gn.pdf
RF4E110GN Nch 30V 11A Power MOSFET DatasheetlOutline(6) VDSS (5) 30VHUML2020L8(4) RDS(on) at 10V (Max.)11.3mW(4) (1) (5) (8) (2) (6) RDS(on) at 4.5V (Max.)15.3mW(3) (7) ID11A(3) (2) PD (1) 2.0WlFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate
rf4e110bn.pdf
RF4E110BN Nch 30V 11A Power MOSFET DatasheetlOutline(6) VDSS30V (5) HUML2020L8(4) RDS(on) at 10V (Max.)11.1mW(4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 15.4mW(3) (7) ID11A(3) (2) PD2.0W (1) lFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate (7)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
