All MOSFET. RF4E110GN Datasheet

 

RF4E110GN Datasheet and Replacement


   Type Designator: RF4E110GN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm
   Package: HUML2020L8
 

 RF4E110GN substitution

   - MOSFET ⓘ Cross-Reference Search

 

RF4E110GN Datasheet (PDF)

 ..1. Size:441K  rohm
 rf4e110gn.pdf pdf_icon

RF4E110GN

RF4E110GN Nch 30V 11A Power MOSFET DatasheetlOutline(6) VDSS (5) 30VHUML2020L8(4) RDS(on) at 10V (Max.)11.3mW(4) (1) (5) (8) (2) (6) RDS(on) at 4.5V (Max.)15.3mW(3) (7) ID11A(3) (2) PD (1) 2.0WlFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate

 7.1. Size:428K  rohm
 rf4e110bn.pdf pdf_icon

RF4E110GN

RF4E110BN Nch 30V 11A Power MOSFET DatasheetlOutline(6) VDSS30V (5) HUML2020L8(4) RDS(on) at 10V (Max.)11.1mW(4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 15.4mW(3) (7) ID11A(3) (2) PD2.0W (1) lFeatures lInner circuit1) Low on - resistance.(1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8).(2) Drain (6) Drain (3) Gate (7)

Datasheet: RF4C050AP , RF4C100BC , RF4E070BN , RF4E070GN , RF4E075AT , RF4E080BN , RF4E080GN , RF4E110BN , RFP50N06 , RF6E045AJ , SIS322DNT , SIS330DN , SIS332DN , SIS334DN , SIS376DN , SIS402DN , SIS406DN .

History: MTDA4N20J3 | RU60E25R | NCEP039N10M | SJMN250R80ZP | IPI65R660CFD | MTC380Q8 | KND4820B

Keywords - RF4E110GN MOSFET datasheet

 RF4E110GN cross reference
 RF4E110GN equivalent finder
 RF4E110GN lookup
 RF4E110GN substitution
 RF4E110GN replacement

 

 
Back to Top

 


 
.