RF4E110GN PDF and Equivalents Search

 

RF4E110GN Specs and Replacement

Type Designator: RF4E110GN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm

Package: HUML2020L8

RF4E110GN substitution

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RF4E110GN datasheet

 ..1. Size:441K  rohm
 rf4e110gn.pdf pdf_icon

RF4E110GN

RF4E110GN Nch 30V 11A Power MOSFET Datasheet lOutline (6) VDSS (5) 30V HUML2020L8 (4) RDS(on) at 10V (Max.) 11.3mW (4) (1) (5) (8) (2) (6) RDS(on) at 4.5V (Max.) 15.3mW (3) (7) ID 11A (3) (2) PD (1) 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate... See More ⇒

 7.1. Size:428K  rohm
 rf4e110bn.pdf pdf_icon

RF4E110GN

RF4E110BN Nch 30V 11A Power MOSFET Datasheet lOutline (6) VDSS 30V (5) HUML2020L8 (4) RDS(on) at 10V (Max.) 11.1mW (4) (1) (5) (8) RDS(on) at 4.5V (Max.) (2) (6) 15.4mW (3) (7) ID 11A (3) (2) PD 2.0W (1) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (5) Drain 2) High Power Small Mold Package (HUML2020L8). (2) Drain (6) Drain (3) Gate (7)... See More ⇒

Detailed specifications: RF4C050AP, RF4C100BC, RF4E070BN, RF4E070GN, RF4E075AT, RF4E080BN, RF4E080GN, RF4E110BN, AON7410, RF6E045AJ, SIS322DNT, SIS330DN, SIS332DN, SIS334DN, SIS376DN, SIS402DN, SIS406DN

Keywords - RF4E110GN MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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