SIS334DN MOSFET Datasheet: N-Ch, 30V, 13.6A. Full specification with pinout and replacement list

SIS334DN Specs and Replacement

Type Designator: SIS334DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0113 Ohm

Package: 1212-8

SIS334DN substitution

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SIS334DN datasheet

..1. Size:562K vishay
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SiS334DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) Definition 0.0113 at VGS = 10 V 20 TrenchFET Power MOSFET 30 5.1 nC 100 % Rg and UIS Tested 0.0146 at VGS = 4.5 V 20 Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS Not... See More ⇒

9.1. Size:575K vishay
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New Product SiS332DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) Definition 0.0084 at VGS = 10 V 35g TrenchFET Power MOSFET 30 8.1 nC 0.0110 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to... See More ⇒

9.2. Size:575K vishay
sis330dn.pdf pdf_icon

New Product SiS330DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) Definition 0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET 30 11.2 nC 0.0075 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant t... See More ⇒

Detailed specifications: RF4E080BN, RF4E080GN, RF4E110BN, RF4E110GN, RF6E045AJ, SIS322DNT, SIS330DN, SIS332DN, AON6380, SIS376DN, SIS402DN, SIS406DN, SIS407ADN, SIS407DN, SIS410DN, SIS412DN, SIS413DN