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SIS376DN Specs and Replacement

Type Designator: SIS376DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: 1212-8

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SIS376DN datasheet

 ..1. Size:563K  vishay
 sis376dn.pdf pdf_icon

SIS376DN

SiS376DN Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0058 at VGS = 10 V 35 100 % Rg and UIS Tested 20 7.7 nC 0.0084 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/EC APPLICATIONS PowerPAK 1212-8 ... See More ⇒

Detailed specifications: RF4E080GN, RF4E110BN, RF4E110GN, RF6E045AJ, SIS322DNT, SIS330DN, SIS332DN, SIS334DN, IRF530, SIS402DN, SIS406DN, SIS407ADN, SIS407DN, SIS410DN, SIS412DN, SIS413DN, SIS414DN

Keywords - SIS376DN MOSFET specs

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