All MOSFET. SIS376DN Datasheet

 

SIS376DN Datasheet and Replacement


   Type Designator: SIS376DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: 1212-8
 

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SIS376DN Datasheet (PDF)

 ..1. Size:563K  vishay
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SIS376DN

SiS376DNVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0058 at VGS = 10 V 35 100 % Rg and UIS Tested20 7.7 nC0.0084 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/EC APPLICATIONSPowerPAK 1212-8

Datasheet: RF4E080GN , RF4E110BN , RF4E110GN , RF6E045AJ , SIS322DNT , SIS330DN , SIS332DN , SIS334DN , AO4407 , SIS402DN , SIS406DN , SIS407ADN , SIS407DN , SIS410DN , SIS412DN , SIS413DN , SIS414DN .

History: SWF8N65DB | NP34N055HHE

Keywords - SIS376DN MOSFET datasheet

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