All MOSFET. SIS376DN Datasheet

 

SIS376DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIS376DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: 1212-8

 SIS376DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIS376DN Datasheet (PDF)

 ..1. Size:563K  vishay
 sis376dn.pdf

SIS376DN SIS376DN

SiS376DNVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.0058 at VGS = 10 V 35 100 % Rg and UIS Tested20 7.7 nC0.0084 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/EC APPLICATIONSPowerPAK 1212-8

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