All MOSFET. SIS412DN Datasheet

 

SIS412DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIS412DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 8.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: 1212-8

 SIS412DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIS412DN Datasheet (PDF)

 ..1. Size:531K  vishay
 sis412dn.pdf

SIS412DN SIS412DN

New ProductSiS412DNVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.024 at VGS = 10 V 12 100 % Rg Tested30 3.8 nC0.030 at VGS = 4.5 V 12APPLICATIONSPowerPAK 1212-8 Notebook PC- System Power- Load SwitchSD3.30 mm

 9.1. Size:570K  vishay
 sis414dn.pdf

SIS412DN SIS412DN

New ProductSiS414DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A)a, g Qg (Typ.)Definition0.016 at VGS = 4.5 V 20 TrenchFET Power MOSFET30 8.2 nC0.020 at VGS = 2.5 V 20 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directive 2002/95/

 9.2. Size:534K  vishay
 sis413dn.pdf

SIS412DN SIS412DN

SiS413DNVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization:0.0094 at VGS = - 10 V - 18d- 30 35.4 nC For definitions of compliance please see0.0132 at VGS = - 4.5 V - 18dwww.vishay.com/doc?99912PowerPAK 1212-8APPLICATIONS

 9.3. Size:526K  vishay
 sis410dn.pdf

SIS412DN SIS412DN

SiS410DNVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.0048 at VGS = 10 V 3520 12.7 nC 100 % Rg and UIS Tested0.0063 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS DC

 9.4. Size:537K  vishay
 sis410n.pdf

SIS412DN SIS412DN

SiS410DNVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFETRoHS 0.0048 at VGS = 10 V 35 100 % Rg TestedCOMPLIANT 20 12.7 nC 100 % UIS Tested0.0063 at VGS = 4.5 V 35APPLICATIONSPowerPAK 1212-8 DC/DC Converter- NotebookS - POL3.30 mm 3.30 m

 9.5. Size:156K  vishay
 sis415dnt.pdf

SIS412DN SIS412DN

SiS415DNTVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III P-Channel Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Thin 0.8 mm max. height0.0040 at VGS = - 10 V 100 % Rg and UIS Tested- 35a Material categorization:0.0055 at VGS = - 4.5 V - 20- 35a 55.5 nCFor definitions of compliance please see 0.0095

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