SIS412DN - аналоги, параметры транзистора - Справочник транзисторов

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New Product SiS412DN Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.024 at VGS = 10 V 12 100 % Rg Tested 30 3.8 nC 0.030 at VGS = 4.5 V 12 APPLICATIONS PowerPAK 1212-8 Notebook PC - System Power - Load Switch S D 3.30 mm

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New Product SiS414DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, g Qg (Typ.) Definition 0.016 at VGS = 4.5 V 20 TrenchFET Power MOSFET 30 8.2 nC 0.020 at VGS = 2.5 V 20 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to RoHS Directive 2002/95/

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SiS413DN Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization 0.0094 at VGS = - 10 V - 18d - 30 35.4 nC For definitions of compliance please see 0.0132 at VGS = - 4.5 V - 18d www.vishay.com/doc?99912 PowerPAK 1212-8 APPLICATIONS

9.3. Size:526K vishay
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SiS410DN Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET 0.0048 at VGS = 10 V 35 20 12.7 nC 100 % Rg and UIS Tested 0.0063 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS DC