SIS429DNT Datasheet and Replacement. Cross Reference Search

SIS429DNT Datasheet (PDF)

..1. Size:208K vishay
sis429dnt.pdf pdf_icon

SiS429DNTwww.vishay.comVishay SiliconixP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) RDS(on) () MAX. ID (A) d Qg (TYP.) 100 % Rg and UIS tested0.021 at VGS = -10 V -20 e-30 15 nC Thin 0.8 mm profile0.034 at VGS = -4.5 V -18.7 Material categorization: Thin PowerPAK 1212-8 Single For definitions of compliance please

9.1. Size:543K vishay
sis427edn.pdf pdf_icon

SiS427EDNVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)d, g Qg (Typ.) 100 % Rg and UIS Tested Typical ESD Performance: 2500 V (HBM)0.0106 at VGS = - 10 V - 50d Material categorization:- 30 0.0160 at VGS = - 6 V - 42.1 22.6 nCFor definitions of compliance please see 0.0213 at

9.2. Size:529K vishay
sis426dn.pdf pdf_icon

SiS426DNVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21Definition VDS (V) RDS(on) ()ID (A)f Qg (Typ.) TrenchFET Power MOSFET0.0045 at VGS = 10 V 35g 100 % Rg and UIS Tested20 13.2 nC0.0058 at VGS = 4.5 V 35g Compliant to RoHS Directive 2002/95/ECAPPLICATIONSPowerPAK 1212-8 P

9.3. Size:564K vishay
sis424dn.pdf pdf_icon

New ProductSiS424DNVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, g Qg (Typ.) TrenchFET Power MOSFET 100 % Rg Tested0.0064 at VGS = 10 V 3520 9.5 nC 100 % UIS Tested0.0089 at VGS = 4.5 V 35APPLICATIONS DC/DC ConverterPowerPAK 1212-8 POL Notebook, System Power

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .