SIS444DN Datasheet. Specs and Replacement

Type Designator: SIS444DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 406 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: 1212-8

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SIS444DN datasheet

 ..1. Size:545K  vishay
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SIS444DN

New Product SiS444DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Max. ID (A)f Qg (Typ.) TrenchFET Power MOSFET 0.0033 at VGS = 10 V 35g 100 % Rg and UIS Tested 30 33.5 nC 0.0043 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 35g APPLICATIONS Powe... See More ⇒

 9.1. Size:550K  vishay
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SIS444DN

SiS443DN Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization 0.0117 at VGS = - 10 V - 35d - 40 41.5 nC For definitions of compliance please see 0.0160 at VGS = - 4.5 V - 35d www.vishay.com/doc?99912 PowerPAK 1212-8 APPLICATIONS ... See More ⇒

 9.2. Size:621K  vishay
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SIS444DN

SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS tested 0.0071 at VGS = -10 V -18 a Material categorization -20 0.0090 at VGS = -4.5 V -18 a 57.5 nC For definitions of compliance please see 0.0125 at VGS = -2.5 V -18 a ww... See More ⇒

 9.3. Size:573K  vishay
sis448dn.pdf pdf_icon

SIS444DN

New Product SiS448DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) Definition 0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET 30 12 nC 0.0075 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to ... See More ⇒

Detailed specifications: SIS429DNT, SIS430DN, SIS434DN, SIS435DNT, SIS436DN, SIS438DN, SIS439DNT, SIS443DN, IRF520, SIS447DN, SIS452DN, SIS454DN, SIS456DN, SIS468DN, SIS472ADN, SIS472DN, SIS476DN

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