SIS444DN datasheet, подбор замены

 ..1. Size:545K  vishay
 sis444dn.pdf 

New Product SiS444DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY Definition VDS (V) RDS(on) ( ) Max. ID (A)f Qg (Typ.) TrenchFET Power MOSFET 0.0033 at VGS = 10 V 35g 100 % Rg and UIS Tested 30 33.5 nC 0.0043 at VGS = 4.5 V Compliant to RoHS Directive 2002/95/EC 35g APPLICATIONS Powe

 9.1. Size:550K  vishay
 sis443dn.pdf 

SiS443DN Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100% Rg and UIS Tested Material categorization 0.0117 at VGS = - 10 V - 35d - 40 41.5 nC For definitions of compliance please see 0.0160 at VGS = - 4.5 V - 35d www.vishay.com/doc?99912 PowerPAK 1212-8 APPLICATIONS

 9.2. Size:621K  vishay
 sis447dn.pdf 

SiS447DN www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III P-Channel power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS tested 0.0071 at VGS = -10 V -18 a Material categorization -20 0.0090 at VGS = -4.5 V -18 a 57.5 nC For definitions of compliance please see 0.0125 at VGS = -2.5 V -18 a ww

 9.3. Size:573K  vishay
 sis448dn.pdf 

New Product SiS448DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)f Qg (Typ.) Definition 0.0056 at VGS = 10 V 35g TrenchFET Power MOSFET 30 12 nC 0.0075 at VGS = 4.5 V 35g PWM Optimized 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to