SIS452DN Datasheet. Specs and Replacement
Type Designator: SIS452DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 27.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 970 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00325 Ohm
Package: 1212-8
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SIS452DN substitution
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SIS452DN datasheet
sis452dn.pdf
New Product SiS452DN Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.00325 at VGS = 10 V TrenchFET Power MOSFET 35 12 13.5 nC 100 % Rg Tested 0.0048 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 12... See More ⇒
sis456dn.pdf
SiS456DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0051 at VGS = 10 V 35 TrenchFET Power MOSFET 30 18.5 nC 0.0068 at VGS = 4.5 V 35 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to RoHS Directive 2002/95/EC S APPLICATI... See More ⇒
sis454dn.pdf
SiS454DN Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.0037 at VGS = 10 V 35 TrenchFET Power MOSFET 20 18.5 nC 100 % Rg and UIS Tested 0.0054 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS DC/DC Con... See More ⇒
Detailed specifications: SIS434DN, SIS435DNT, SIS436DN, SIS438DN, SIS439DNT, SIS443DN, SIS444DN, SIS447DN, STF13NM60N, SIS454DN, SIS456DN, SIS468DN, SIS472ADN, SIS472DN, SIS476DN, SIS478DN, SIS496EDNT
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