SIS454DN Datasheet and Replacement
Type Designator: SIS454DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 630 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: 1212-8
SIS454DN Datasheet (PDF)
sis454dn.pdf

SiS454DNVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0037 at VGS = 10 V 35 TrenchFET Power MOSFET20 18.5 nC 100 % Rg and UIS Tested0.0054 at VGS = 4.5 V 35 Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8APPLICATIONS DC/DC Con
sis456dn.pdf

SiS456DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0051 at VGS = 10 V 35 TrenchFET Power MOSFET30 18.5 nC0.0068 at VGS = 4.5 V 35 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directive 2002/95/ECS APPLICATI
sis452dn.pdf

New ProductSiS452DNVishay SiliconixN-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.00325 at VGS = 10 V TrenchFET Power MOSFET3512 13.5 nC 100 % Rg Tested0.0048 at VGS = 4.5 V 35 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 12
Datasheet: SIS435DNT , SIS436DN , SIS438DN , SIS439DNT , SIS443DN , SIS444DN , SIS447DN , SIS452DN , AON6380 , SIS456DN , SIS468DN , SIS472ADN , SIS472DN , SIS476DN , SIS478DN , SIS496EDNT , SIS612EDNT .
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