All MOSFET. SIS496EDNT Datasheet

 

SIS496EDNT Datasheet and Replacement


   Type Designator: SIS496EDNT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 125 nS
   Cossⓘ - Output Capacitance: 322 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: 1212-8
 

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SIS496EDNT Datasheet (PDF)

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SIS496EDNT

SiS496EDNTVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a Qg (Typ.) 100 % Rg and UIS tested0.0048 at VGS = 10 V 50 Thin 0.75 mm height30 14 nC0.0062 at VGS = 4.5 V 50 Typical ESD performance 2500 V Material categorization:Thin PowerPAK 1212-8For definitions of compl

Datasheet: SIS452DN , SIS454DN , SIS456DN , SIS468DN , SIS472ADN , SIS472DN , SIS476DN , SIS478DN , IRFZ48N , SIS612EDNT , SIS698DN , SIS778DN , SIS780DN , SIS782DN , SIS822DNT , SIS862DN , SIS888DN .

History: SWP056R68E7T | TPCP8405 | HGP155N15S | 2SJ377 | WSD30140DN56 | 2SK3111-S

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