SIS496EDNT Datasheet. Specs and Replacement
Type Designator: SIS496EDNT 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 125 nS
Cossⓘ - Output Capacitance: 322 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: 1212-8
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SIS496EDNT substitution
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SIS496EDNT datasheet
sis496ednt.pdf
SiS496EDNT Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)a Qg (Typ.) 100 % Rg and UIS tested 0.0048 at VGS = 10 V 50 Thin 0.75 mm height 30 14 nC 0.0062 at VGS = 4.5 V 50 Typical ESD performance 2500 V Material categorization Thin PowerPAK 1212-8 For definitions of compl... See More ⇒
Detailed specifications: SIS452DN, SIS454DN, SIS456DN, SIS468DN, SIS472ADN, SIS472DN, SIS476DN, SIS478DN, STP65NF06, SIS612EDNT, SIS698DN, SIS778DN, SIS780DN, SIS782DN, SIS822DNT, SIS862DN, SIS888DN
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