All MOSFET. SIS778DN Datasheet

 

SIS778DN Datasheet and Replacement


   Type Designator: SIS778DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: 1212-8
 

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SIS778DN Datasheet (PDF)

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SIS778DN

SiS778DNVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A)e Qg (Typ.) Definition SkyFET Monolithic TrenchFET Power 0.0050 at VGS = 10 V 3530 13.3 nCMOSFET and Schottky Diode0.0062 at VGS = 4.5 V 35 100 % Rg and UIS Tested Low Thermal Resistan

Datasheet: SIS468DN , SIS472ADN , SIS472DN , SIS476DN , SIS478DN , SIS496EDNT , SIS612EDNT , SIS698DN , RU7088R , SIS780DN , SIS782DN , SIS822DNT , SIS862DN , SIS888DN , SIS890DN , SIS892ADN , SIS892DN .

History: SWH15P03 | NTTFS4C05N

Keywords - SIS778DN MOSFET datasheet

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