All MOSFET. SIS778DN Datasheet

 

SIS778DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIS778DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 20.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27.5 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 335 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: 1212-8

 SIS778DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIS778DN Datasheet (PDF)

 ..1. Size:547K  vishay
 sis778dn.pdf

SIS778DN SIS778DN

SiS778DNVishay SiliconixN-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A)e Qg (Typ.) Definition SkyFET Monolithic TrenchFET Power 0.0050 at VGS = 10 V 3530 13.3 nCMOSFET and Schottky Diode0.0062 at VGS = 4.5 V 35 100 % Rg and UIS Tested Low Thermal Resistan

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STS8C5H30L | KF5N50PS | HUFA75309T3ST | DMG6968UTS | IXFE80N50 | 6706A | DMG1012T

 

 
Back to Top