SIS778DN Datasheet. Specs and Replacement
Type Designator: SIS778DN 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 335 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: 1212-8
📄📄 Copy
SIS778DN substitution
- MOSFET ⓘ Cross-Reference Search
SIS778DN datasheet
sis778dn.pdf
SiS778DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A)e Qg (Typ.) Definition SkyFET Monolithic TrenchFET Power 0.0050 at VGS = 10 V 35 30 13.3 nC MOSFET and Schottky Diode 0.0062 at VGS = 4.5 V 35 100 % Rg and UIS Tested Low Thermal Resistan... See More ⇒
Detailed specifications: SIS468DN, SIS472ADN, SIS472DN, SIS476DN, SIS478DN, SIS496EDNT, SIS612EDNT, SIS698DN, IRFZ48N, SIS780DN, SIS782DN, SIS822DNT, SIS862DN, SIS888DN, SIS890DN, SIS892ADN, SIS892DN
Keywords - SIS778DN MOSFET specs
SIS778DN cross reference
SIS778DN equivalent finder
SIS778DN pdf lookup
SIS778DN substitution
SIS778DN replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
