SIS890DN Datasheet. Specs and Replacement

Type Designator: SIS890DN  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 291 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0235 Ohm

Package: 1212-8

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SIS890DN datasheet

 ..1. Size:564K  vishay
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SIS890DN

SiS890DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.0235 at VGS = 10 V 30g Capable of Operating with 5 V Gate Drive 100 0.0245 at VGS = 7.5 V 30g 9.5 nC Material categorization For definitions of compliance please see 0.0315 at VGS = 4.5 ... See More ⇒

 9.1. Size:548K  vishay
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SIS890DN

SiS892ADN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.033 at VGS = 10 V 28 Capable of Operating with 5 V Gate Drive 100 0.036 at VGS = 7.5 V 26.8 6.1 nC Material categorization For definitions of 0.047 at VGS = 4.5 V 23.5 compliance pleas... See More ⇒

 9.2. Size:560K  vishay
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SIS890DN

SiS892DN Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)f Qg (Typ.) Definition 0.029 at VGS = 10 V 30g TrenchFET Power MOSFET 100 6.7 nC 0.042 at VGS = 4.5 V 25 100 % Rg Tested 100 % UIS Tested PowerPAK 1212-8 Compliant to RoHS Directive 2002/95/EC APPLICATION... See More ⇒

Detailed specifications: SIS612EDNT, SIS698DN, SIS778DN, SIS780DN, SIS782DN, SIS822DNT, SIS862DN, SIS888DN, AON7403, SIS892ADN, SIS892DN, SIS902DN, SIS990DN, SISA04DN, SISA10DN, SISA12ADN, SISA12DN

Keywords - SIS890DN MOSFET specs

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