SIS890DN Datasheet and Replacement
Type Designator: SIS890DN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 291 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0235 Ohm
Package: 1212-8
SIS890DN substitution
SIS890DN Datasheet (PDF)
sis890dn.pdf

SiS890DNVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested0.0235 at VGS = 10 V 30g Capable of Operating with 5 V Gate Drive100 0.0245 at VGS = 7.5 V 30g 9.5 nC Material categorization:For definitions of compliance please see0.0315 at VGS = 4.5
sis892adn.pdf

SiS892ADNVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested0.033 at VGS = 10 V 28 Capable of Operating with 5 V Gate Drive100 0.036 at VGS = 7.5 V 26.8 6.1 nC Material categorization: For definitions of0.047 at VGS = 4.5 V 23.5compliance pleas
sis892dn.pdf

SiS892DNVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)f Qg (Typ.)Definition 0.029 at VGS = 10 V 30g TrenchFET Power MOSFET100 6.7 nC0.042 at VGS = 4.5 V 25 100 % Rg Tested 100 % UIS TestedPowerPAK 1212-8 Compliant to RoHS Directive 2002/95/ECAPPLICATION
Datasheet: SIS612EDNT , SIS698DN , SIS778DN , SIS780DN , SIS782DN , SIS822DNT , SIS862DN , SIS888DN , EMB04N03H , SIS892ADN , SIS892DN , SIS902DN , SIS990DN , SISA04DN , SISA10DN , SISA12ADN , SISA12DN .
History: MTB06N03V8 | SSF7504A7
Keywords - SIS890DN MOSFET datasheet
SIS890DN cross reference
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SIS890DN substitution
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History: MTB06N03V8 | SSF7504A7



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