RFG30P06 MOSFET Datasheet: P-Ch, 60V, 30A. Full specification with pinout and replacement list

RFG30P06 Specs and Replacement

Type Designator: RFG30P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 135 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 800 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO247

RFG30P06 substitution

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RFG30P06 datasheet

..1. Size:386K fairchild semi
rfg30p06 rfp30p06 rf1s30p06sm.pdf pdf_icon

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin... See More ⇒

7.1. Size:365K fairchild semi
rfg30p05 rfp30p05 rf1s30p05sm.pdf pdf_icon

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 50V These are P-Channel power MOSFETs manufactured rDS(ON) = 0.065 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin... See More ⇒

Detailed specifications: RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , RFG30P05 , 8205A , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 .