All MOSFET. RFG30P06 Datasheet

 

RFG30P06 MOSFET. Datasheet pdf. Equivalent

Type Designator: RFG30P06

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 135 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: TO247

RFG30P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFG30P06 Datasheet (PDF)

1.1. rfg30p06 rfp30p06 rf1s30p06sm.pdf Size:386K _fairchild_semi

RFG30P06
RFG30P06

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs • 30A, 60V These are P-Channel power MOSFETs manufactured using • rDS(ON) = 0.065Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

3.1. rfg30p05 rfp30p05 rf1s30p05sm.pdf Size:365K _fairchild_semi

RFG30P06
RFG30P06

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs • 30A, 50V These are P-Channel power MOSFETs manufactured • rDS(ON) = 0.065Ω using the MegaFET process. This process, which uses • Temperature Compensating PSPICE® Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

 

Datasheet: RFD8P05SM , RFD8P06E , RFD8P06ESM , RFD8P06LE , RFD8P06LESM , RFF60P06 , RFF70N06 , RFG30P05 , IRF830 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 .

 

 
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