All MOSFET. DG10N60-TO220F Datasheet

 

DG10N60-TO220F Datasheet and Replacement


   Type Designator: DG10N60-TO220F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO220F
 

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DG10N60-TO220F Datasheet (PDF)

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DG10N60-TO220F

JiangSu Dongchen Electronics Technology Co.,LtdDG10N60N 201603-AN-CHANNEL ENHANCEMENT MODE MOSFET General DescriptionDG10N60N

Datasheet: 2SK2619 , 2SK2626 , 2SK2634 , 2SK2635 , 2SK2636 , 2SK2637 , 2SK2773 , DG10N60 , SPP20N60C3 , FS1KM-18A , FW201 , FW202 , FW203 , FW206 , GP28S50XN220 , GP28S50XN220FP , GP28S50XN3P .

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