DG10N60-TO220F Specs and Replacement
Type Designator: DG10N60-TO220F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 145 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO220F
DG10N60-TO220F substitution
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DG10N60-TO220F datasheet
dg10n60.pdf
JiangSu Dongchen Electronics Technology Co.,Ltd DG10N60 N 201603-A N-CHANNEL ENHANCEMENT MODE MOSFET General Description DG10N60 N ... See More ⇒
Detailed specifications: 2SK2619, 2SK2626, 2SK2634, 2SK2635, 2SK2636, 2SK2637, 2SK2773, DG10N60, SPP20N60C3, FS1KM-18A, FW201, FW202, FW203, FW206, GP28S50XN220, GP28S50XN220FP, GP28S50XN3P
Keywords - DG10N60-TO220F MOSFET specs
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DG10N60-TO220F replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SIHA21N60EF
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