GP28S50GN220FP Datasheet and Replacement
Type Designator: GP28S50GN220FP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 104.5 nS
Cossⓘ - Output Capacitance: 1766.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO220FP
GP28S50GN220FP substitution
GP28S50GN220FP Datasheet (PDF)
gp28s50.pdf

GP28S50POWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is designed to wi
Datasheet: FW202 , FW203 , FW206 , GP28S50XN220 , GP28S50XN220FP , GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , 5N65 , GP28S50GN3P , GP28S50GN247 , IPA70R360P7S , IPSA70R360P7S , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M .
History: FDC3535
Keywords - GP28S50GN220FP MOSFET datasheet
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History: FDC3535



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