GP28S50GN220FP Specs and Replacement
Type Designator: GP28S50GN220FP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 104.5 nS
Cossⓘ - Output Capacitance: 1766.7 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO220FP
GP28S50GN220FP substitution
GP28S50GN220FP datasheet
gp28s50.pdf
GP28S50 POWER FIELD EFFECT TRANSISTOR GENERAL DESCRIPTION FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to wi... See More ⇒
Detailed specifications: FW202 , FW203 , FW206 , GP28S50XN220 , GP28S50XN220FP , GP28S50XN3P , GP28S50XN247 , GP28S50GN220 , CS150N03A8 , GP28S50GN3P , GP28S50GN247 , IPA70R360P7S , IPSA70R360P7S , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M .
Keywords - GP28S50GN220FP MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
