All MOSFET. GP28S50GN220FP Datasheet

 

GP28S50GN220FP MOSFET. Datasheet pdf. Equivalent


   Type Designator: GP28S50GN220FP
   Marking Code: GP28S50G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40.7 nC
   trⓘ - Rise Time: 104.5 nS
   Cossⓘ - Output Capacitance: 1766.7 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO220FP

 GP28S50GN220FP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

GP28S50GN220FP Datasheet (PDF)

 7.1. Size:495K  champion
 gp28s50.pdf

GP28S50GN220FP GP28S50GN220FP

GP28S50POWER FIELD EFFECT TRANSISTORGENERAL DESCRIPTION FEATURESThis high voltage MOSFET uses an advanced termination Robust High Voltage Terminationscheme to provide enhanced voltage-blocking capability Avalanche Energy Specifiedwithout degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to aadvanced MOSFET is designed to wi

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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