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SIZ790DT Specs and Replacement

Type Designator: SIZ790DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 185 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm

Package: POWERPAIR6X3.7

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SIZ790DT datasheet

 ..1. Size:205K  vishay
 siz790dt.pdf pdf_icon

SIZ790DT

New Product SiZ790DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0093 at VGS = 10 V 16a SkyFET Monolithic TrenchFET Channel-1 30 7.7 nC Power MOSFETs and Schottky Diode 0.0130 at VGS = 4.5 V 16a 100 % Rg and UIS T... See More ⇒

Detailed specifications: IPA70R360P7S, IPSA70R360P7S, IRF50N06, TK80E08K3, TK150E09NE, TSA9N90M, SIZ728DT, SIZ730DT, 2SK3568, SIZ900DT, SIZ902DT, SIZ904DT, SIZ910DT, SIZ914DT, SIZ916DT, SIZ918DT, SIZ920DT

Keywords - SIZ790DT MOSFET specs

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