All MOSFET. SIZ790DT Datasheet

 

SIZ790DT Datasheet and Replacement


   Type Designator: SIZ790DT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: POWERPAIR6X3.7
 

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SIZ790DT Datasheet (PDF)

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SIZ790DT

New ProductSiZ790DTVishay SiliconixDual N-Channel 30 V (D-S) MOSFETs with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.0093 at VGS = 10 V 16a SkyFET Monolithic TrenchFET Channel-1 30 7.7 nCPower MOSFETs and Schottky Diode0.0130 at VGS = 4.5 V 16a 100 % Rg and UIS T

Datasheet: IPA70R360P7S , IPSA70R360P7S , IRF50N06 , TK80E08K3 , TK150E09NE , TSA9N90M , SIZ728DT , SIZ730DT , 5N65 , SIZ900DT , SIZ902DT , SIZ904DT , SIZ910DT , SIZ914DT , SIZ916DT , SIZ918DT , SIZ920DT .

History: TK20J60W5 | NP80N055CHE

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