SIZ910DT MOSFET Datasheet: N-Ch, 30V, 22A. Full specification with pinout and replacement list

SIZ910DT Specs and Replacement

Type Designator: SIZ910DT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: POWERPAIR6X5

SIZ910DT substitution

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SIZ910DT datasheet

..1. Size:205K vishay
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New Product SiZ910DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Definition TrenchFET Power MOSFETs 0.0058 at VGS = 10 V 40a 100 % Rg and UIS Tested Channel-1 30 12.5 nC 0.0075 at VGS = 4.5 V 40a Compliant to RoHS Directive 2002/95/EC 0.... See More ⇒

9.1. Size:217K vishay
siz918dt.pdf pdf_icon

New Product SiZ918DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0120 at VGS = 10 V 16a For definitions of compliance please see Channel-1 30 6.8 nC 0.0145 at VGS = 4.5 V www.vishay.com/doc?99912 16a 0.0037 at V... See More ⇒

9.2. Size:209K vishay
siz916dt.pdf pdf_icon

New Product SiZ916DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFETs VDS (V) RDS(on) ( ) (Max.) ID (A)g Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.0064 at VGS = 10 V 16a Channel-1 30 7.2 nC For definitions of compliance please see 0.0100 at VGS = 4.5 V 16a www.vishay.com/doc?999... See More ⇒

9.3. Size:199K vishay
siz914dt.pdf pdf_icon

SiZ914DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFETs VDS (V) RDS(on) ( ) (Max.) ID (A)g Qg (Typ.) 100 % Rg and UIS Tested Material categorization 0.00640 at VGS = 10 V 16a Channel-1 30 7.2 nC For definitions of compliance please see 0.01000 at VGS = 4.5 V 16a www.vishay.com/doc?99912 0.00137 at... See More ⇒

Detailed specifications: TK150E09NE, TSA9N90M, SIZ728DT, SIZ730DT, SIZ790DT, SIZ900DT, SIZ902DT, SIZ904DT, SI2302, SIZ914DT, SIZ916DT, SIZ918DT, SIZ920DT, SK830321, SK840303, SK840316, SK840317