SK860330
MOSFET. Datasheet pdf. Equivalent
Type Designator: SK860330
Marking Code: 30
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 27
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 38
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 600
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019
Ohm
Package: HSO8-F4-B
SK860330
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SK860330
Datasheet (PDF)
..1. Size:347K panasonic
sk860330.pdf 
Doc No. TT4-EA-14538Revision. 2Product StandardsMOS FETSK8603300LSK8603300LSilicon N-channel MOSFETUnit : mm with Schottky Barrier Diode5.14.9 0.22For Load-switching / For DC-DC Converter8 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 1.6 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 complian
8.1. Size:367K panasonic
sk860314.pdf
Doc No. TT4-EA-14461Revision. 3Product StandardsMOS FETSK8603140LSK8603140LSilicon N-channel MOS FETUnit : mm 5.1For Load-switching / For DC-DC Converter4.9 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 1.8 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.4 1.0 Ma
8.2. Size:344K panasonic
sk860315.pdf
Doc No. TT4-EA-14213Revision. 3Product StandardsMOS FETSK8603150LSK8603150LSilicon N-channel MOS FETUnit : mm 5.1For Load-switching / For DC-DC Converter4.9 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 2.5 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.4 1.0 Ma
8.3. Size:371K panasonic
sk860318.pdf
Doc No. TT4-EA-14216Revision. 3Product StandardsMOS FETSK8603180LSK8603180LSilicon N-channel MOSFETUnit : mm 5.1For Load-switching / For DC-DC Converter4.9 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 6.7 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.4 1.0 Mar
8.4. Size:345K panasonic
sk860316.pdf
Doc No. TT4-EA-14462Revision. 3Product StandardsMOS FETSK8603160LSK8603160LSilicon N-channel MOS FETUnit : mm 5.1For Load-switching / For DC-DC Converter4.9 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 3.3 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.4 1.0 Ma
8.5. Size:348K panasonic
sk860319.pdf
Doc No. TT4-EA-14211Revision. 4Product StandardsMOS FETSK8603190LSK8603190LSilicon N-channel MOS FETUnit : mm 5.1For Load-switching / For DC-DC Converter4.9 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 10 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.4 1.0 Mar
8.6. Size:370K panasonic
sk860317.pdf
Doc No. TT4-EA-14480Revision. 2Product StandardsMOS FETSK8603170LSK8603170LSilicon N-channel MOS FETUnit : mm 5.1For Load-switching / For DC-DC Converter4.9 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on)typ = 3.9 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.4 1.0 Mar
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