All MOSFET. SKH06100 Datasheet

 

SKH06100 Datasheet and Replacement


   Type Designator: SKH06100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 165 nC
   tr ⓘ - Rise Time: 140 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
   Package: TO-263
 

 SKH06100 substitution

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SKH06100 Datasheet (PDF)

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SKH06100

60V High Current Low RDS(ON) N ch Trench Power MOSFET EKH06100 / FKH0660 / SKH06100 Features Package TO220 TO220F TO263 VDS -------------------------------------------------------- 60 V EKH06100 FKH0660 SKH06100 ID ------------------------ 100 A (EKH06100, SKH06100) (Back side) RDS(ON) -------------- 3.8 m typ.(VGS = 10 V, ID = 50 A) D Built-in Gate pr

Datasheet: SK840320 , SK860314 , SK860315 , SK860316 , SK860317 , SK860318 , SK860319 , SK860330 , IRF1405 , SKI03021 , SKI03036 , SKI03063 , SKI03087 , SKI04024 , SKI04033 , SKI04044 , SKI06048 .

History: JFAM20N65C

Keywords - SKH06100 MOSFET datasheet

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