SKI04044
MOSFET. Datasheet pdf. Equivalent
Type Designator: SKI04044
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 90
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 80
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 35
nC
trⓘ - Rise Time: 5.6
nS
Cossⓘ -
Output Capacitance: 395
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052
Ohm
Package:
TO-263
SKI04044
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SKI04044
Datasheet (PDF)
..1. Size:235K sanken-ele
ski04044.pdf 
40 V, 80 A, 4.1 m Low RDS(ON) N ch Trench Power MOSFET SKI04044 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 5.2 m max. (VGS = 10 V, ID = 42.8 A) Qg ------16.0 nC (VGS = 4.5 V, VDS = 20 V, ID = 42.8 A) Low Total Gate
..2. Size:255K inchange semiconductor
ski04044.pdf
isc N-Channel MOSFET Transistor SKI04044FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 5.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.1. Size:235K sanken-ele
ski04033.pdf
40 V, 80 A, 3.1 m Low RDS(ON) N ch Trench Power MOSFET SKI04033 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 58.5 A) Qg ------26.4 nC (VGS = 4.5 V, VDS = 20 V, ID = 58.5 A) Low Total Gate
8.2. Size:235K sanken-ele
ski04024.pdf
40 V, 85 A, 2.6 m Low RDS(ON) N ch Trench Power MOSFET SKI04024 Features Package TO-263 V(BR)DSS --------------------------------- 40 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ---------- 3.2 m max. (VGS = 10 V, ID = 82.5 A) Qg ------44.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 82.5 A) Low Total Gate
8.3. Size:255K inchange semiconductor
ski04033.pdf
isc N-Channel MOSFET Transistor SKI04033FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
8.4. Size:255K inchange semiconductor
ski04024.pdf
isc N-Channel MOSFET Transistor SKI04024FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 3.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
Datasheet: IRFP360LC
, IRFP3710
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, IRFP431
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, IRFP440
, IRFP440A
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, IRFP450FI
, IRFP450LC
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.
