AON7430L Datasheet and Replacement
Type Designator: AON7430L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 125 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: DFN3X3
AON7430L substitution
AON7430L Datasheet (PDF)
aon7430l.pdf

AON7430LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30VThis device is suitable for high side switch in SMPS and (VGS = 10V)ID = 20Ageneral purpose applications. (VGS = 10V)RDS(ON)
aon7430.pdf

AON743030V N-Channel MOSFETGeneral Description FeaturesThe AON7430 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.VDS (V) = 30VThis device is suitable for high side switch in SMPS andID = 34A (VGS = 10V)general purpose applications.RDS(ON)
aon7436.pdf

AON743620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7436 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
aon7432.pdf

AON743230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7432 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
Datasheet: SKI06106 , SKI07074 , SKI07114 , SKI07171 , SKI10123 , SKI10195 , SKI10297 , SW1N55D , IRF840 , AP9915H , AP9915J , FHP730 , FIR120N055PG , FTP16N06B , HY4008W , HY4008A , ITA08N65R .
History: IRF1503LPBF
Keywords - AON7430L MOSFET datasheet
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History: IRF1503LPBF



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