AON7430L - параметры транзистора MOSFET, его аналоги, datasheet

AON7430L Datasheet (PDF)

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AON7430LN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON7430L uses advanced trench technology to provide excellent RDS(ON) with low gate charge. VDS (V) = 30VThis device is suitable for high side switch in SMPS and (VGS = 10V)ID = 20Ageneral purpose applications. (VGS = 10V)RDS(ON)

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AON743030V N-Channel MOSFETGeneral Description FeaturesThe AON7430 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge.VDS (V) = 30VThis device is suitable for high side switch in SMPS andID = 34A (VGS = 10V)general purpose applications.RDS(ON)

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AON743620V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AON7436 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 23Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

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AON743230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7432 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 18Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

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