ITA08N65R PDF and Equivalents Search

 

ITA08N65R Specs and Replacement

Type Designator: ITA08N65R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 123 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

ITA08N65R substitution

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ITA08N65R datasheet

 ..1. Size:1275K  inpower semi
ita08n65r.pdf pdf_icon

ITA08N65R

ITA08N65R N-Channel MOSFET Lead Free Package and Finish Applications Adaptor VDSS RDS(ON)(Typ.) ID Charger SMPS 650V 0.86 8A Features RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND ITA08N65R TO-220F IPS Absolute M... See More ⇒

Detailed specifications: AON7430L, AP9915H, AP9915J, FHP730, FIR120N055PG, FTP16N06B, HY4008W, HY4008A, IRF1404, ME15N10G, MMF80R650P, NCE65T130D, NCE65T130, NCE65T130F, NCEP60T12A, NTMFS4955N, SE6880

Keywords - ITA08N65R MOSFET specs

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