NCE65T130D MOSFET Datasheet: N-Ch, 650V, 28A. Full specification with pinout and replacement list

NCE65T130D Specs and Replacement

Type Designator: NCE65T130D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 260 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 28 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO263

NCE65T130D substitution

- MOSFET ⓘ Cross-Reference Search

NCE65T130D datasheet

..1. Size:616K ncepower
nce65t130d nce65t130 nce65t130f.pdf pdf_icon

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and... See More ⇒

5.1. Size:469K ncepower
nce65t130t.pdf pdf_icon

NCE65T130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 28 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app... See More ⇒

5.2. Size:616K ncepower
nce65t130.pdf pdf_icon