All MOSFET. NCE65T130D Datasheet

 

NCE65T130D Datasheet and Replacement


   Type Designator: NCE65T130D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 260 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO263
 

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NCE65T130D Datasheet (PDF)

 ..1. Size:616K  ncepower
 nce65t130d nce65t130 nce65t130f.pdf pdf_icon

NCE65T130D

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:469K  ncepower
 nce65t130t.pdf pdf_icon

NCE65T130D

NCE65T130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 5.2. Size:616K  ncepower
 nce65t130.pdf pdf_icon

NCE65T130D

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.3. Size:616K  ncepower
 nce65t130f.pdf pdf_icon

NCE65T130D

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

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Datasheet: FHP730 , FIR120N055PG , FTP16N06B , HY4008W , HY4008A , ITA08N65R , ME15N10G , MMF80R650P , IRF630 , NCE65T130 , NCE65T130F , NCEP60T12A , NTMFS4955N , SE6880 , SW50N06 , 2SK3642-ZK , BUZ384 .

History: VBZMB7N65 | MTA90N03ZN3

Keywords - NCE65T130D MOSFET datasheet

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