Справочник MOSFET. NCE65T130D

 

NCE65T130D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65T130D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 260 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 12 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
   Тип корпуса: TO263
     - подбор MOSFET транзистора по параметрам

 

NCE65T130D Datasheet (PDF)

 ..1. Size:616K  ncepower
 nce65t130d nce65t130 nce65t130f.pdf pdf_icon

NCE65T130D

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.1. Size:469K  ncepower
 nce65t130t.pdf pdf_icon

NCE65T130D

NCE65T130T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power app

 5.2. Size:616K  ncepower
 nce65t130.pdf pdf_icon

NCE65T130D

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 5.3. Size:616K  ncepower
 nce65t130f.pdf pdf_icon

NCE65T130D

NCE65T130D,NCE65T130,NCE65T130F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

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