BUZ384 MOSFET Datasheet: N-Ch, 500V, 10.5A. Full specification with pinout and replacement list

BUZ384 Specs and Replacement

Type Designator: BUZ384

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO218AA

BUZ384 substitution

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BUZ384 datasheet

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BUZ 384 SIPMOS Power Transistor N channel Enhancement mode FREDFET Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 384 500 V 10.5 A 0.6 TO-218 AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 500 V VDGR Drain-gate voltage RGS = 20 k 500 Continuous drain current ID A TC = 25 C 10.5 Pulsed drain... See More ⇒

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BUZ 380 SIPMOS Power Transistor N channel Enhancement mode FREDFET Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 380 1000 V 5.5 A 2 TO-218 AA C67078-A3205-A2 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 1000 V VDGR Drain-gate voltage RGS = 20 k 1000 Continuous drain current ID A TC = 30 C 5.5 Pulsed drain ... See More ⇒

9.3. Size:187K siemens
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