RFG60P05E Specs and Replacement

Type Designator: RFG60P05E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 215 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 1700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO247

RFG60P05E substitution

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RFG60P05E datasheet

 ..1. Size:133K  fairchild semi
 rfg60p05e.pdf pdf_icon

RFG60P05E

RFG60P05E Data Sheet January 2002 60A, 50V, 0.030 Ohm, ESD Rated, Features P-Channel Power MOSFET 60A, 50V This is a P-Channel power MOSFET manufactured using the rDS(ON) = 0.030 MegaFET process. This process, which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand... See More ⇒

 7.1. Size:105K  fairchild semi
 rfg60p06e.pdf pdf_icon

RFG60P05E

RFG60P06E Data Sheet January 2002 60A, 60V, 0.030 Ohm, ESD Rated, Features P-Channel Power MOSFET 60A, 60V The RFG60P06E P-Channel power MOSFET is rDS(ON) = 0.030 manufactured using the MegaFET process. This process, Temperature Compensating PSPICE Model which uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou... See More ⇒

 7.2. Size:103K  harris semi
 rfg60p03 rfp60p03 rf1s60p03-sm.pdf pdf_icon

RFG60P05E

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Detailed specifications: RFG40N10, RFG40N10LE, RFG45N06, RFG45N06LE, RFG50N05L, RFG50N06, RFG50N06LE, RFG60P03, IRF9540N, RFG60P06E, RFG70N06, RFG75N05E, RFL1N10L, RFP10P03L, RFP12N06RLE, RFP12N10L, RFP12P08

Keywords - RFG60P05E MOSFET specs

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