RFG60P05E Datasheet and Replacement
Type Designator: RFG60P05E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 1700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO247
RFG60P05E substitution
RFG60P05E Datasheet (PDF)
rfg60p05e.pdf
RFG60P05EData Sheet January 200260A, 50V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 50VThis is a P-Channel power MOSFET manufactured using the rDS(ON) = 0.030MegaFET process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand
rfg60p06e.pdf
RFG60P06EData Sheet January 200260A, 60V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 60VThe RFG60P06E P-Channel power MOSFET is rDS(ON) = 0.030manufactured using the MegaFET process. This process, Temperature Compensating PSPICE Modelwhich uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou
Datasheet: RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , IRF9540N , RFG60P06E , RFG70N06 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 .
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Keywords - RFG60P05E MOSFET datasheet
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RFG60P05E replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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