All MOSFET. RFG60P05E Datasheet

 

RFG60P05E Datasheet and Replacement


   Type Designator: RFG60P05E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO247
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RFG60P05E Datasheet (PDF)

 ..1. Size:133K  fairchild semi
 rfg60p05e.pdf pdf_icon

RFG60P05E

RFG60P05EData Sheet January 200260A, 50V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 50VThis is a P-Channel power MOSFET manufactured using the rDS(ON) = 0.030MegaFET process. This process, which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstand

 7.1. Size:105K  fairchild semi
 rfg60p06e.pdf pdf_icon

RFG60P05E

RFG60P06EData Sheet January 200260A, 60V, 0.030 Ohm, ESD Rated, FeaturesP-Channel Power MOSFET 60A, 60VThe RFG60P06E P-Channel power MOSFET is rDS(ON) = 0.030manufactured using the MegaFET process. This process, Temperature Compensating PSPICE Modelwhich uses feature sizes approaching those of LSI circuits gives optimum utilization of silicon, resulting in ou

 7.2. Size:103K  harris semi
 rfg60p03 rfp60p03 rf1s60p03-sm.pdf pdf_icon

RFG60P05E

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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