SW1N60A MOSFET. Datasheet pdf. Equivalent
Type Designator: SW1N60A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 0.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 18 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
Package: TO-92
SW1N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SW1N60A Datasheet (PDF)
sw1n60a.pdf
SAMWIN SW1N60AN-channel MOSFETBVDSS : 600VFeatures TO-92ID : 0.8A High ruggednessRDS(ON) : 15ohm RDS(ON) (Max 15 )@VGS=10V Gate Charge (Typical 6nC) Improved dv/dt Capability 12 100% Avalanche Tested231. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.This technology enab
ssw1n60a.pdf
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Low RDS(ON) : 9.390 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characte
sw1n60e.pdf
SAMWIN SW1N60E Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 600 V BVDSS Breakdown voltage temperature ID=250uA, referenced to 25oC 0.76 V/oC / TJ coefficient VDS=600V, VGS=0V 1 uA IDSS Drain to source leakage current
sw1n60c.pdf
SAMWIN SW1N60CN-channel D-PAK/I-PAK/TO-92 MOSFETFeaturesTO-251 TO-252 TO-92BVDSS : 600V High ruggednessID : 1.0A RDS(ON) (Max 9 )@VGS=10V Gate Charge (Typical 5.6nC)RDS(ON) : 9.0ohm1 21 Improved dv/dt Capability 23 132 100% Avalanche Tested321. Gate 2. Drain 3. SourceGeneral Description1This power MOSFET is produced with advanced V
sw1n60d.pdf
SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET TO-92 TO-251 Features BVDSS : 600V ID : 1A High ruggedness RDS(ON) (Max8.5)@VGS=10V RDS(ON) :8.5 Gate Charge (Typical 6.8 nC) Improved dv/dt Capability 1 100% Avalanche Tested 1 2 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
