All MOSFET. SW226NV Datasheet

 

SW226NV MOSFET. Datasheet pdf. Equivalent


   Type Designator: SW226NV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 27 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-251 TO-252

 SW226NV Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SW226NV Datasheet (PDF)

 ..1. Size:833K  samwin
 sw226nv.pdf

SW226NV SW226NV

SW226NVSW226NVSAMWINN-channel MOSFETBVDSS : 600VIPAKDPAKFeaturesID : 4.0A High ruggednessRDS(ON) : 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 34nC)21 Improved dv/dt Capability 22 13 3 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAM

 8.1. Size:479K  samwin
 sw226n.pdf

SW226NV SW226NV

SW226NSAMWINN-channel MOSFETTO-251 TO-252BVDSS : 600VFeaturesID : 4.0A High ruggednessRDS(ON) : 2.3ohm RDS(ON) (Max 2.3 )@VGS=10V1 2 Gate Charge (Typical 30nC)123 Improved dv/dt Capability 32 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SWD80N04V | RU20P3C | SWN7N65K2 | PJD4NA65 | SVF4N65RMJ | SWU6N80D | 2SK2397-01MR

 

 
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