SW226NV MOSFET Datasheet: N-Ch, 600V, 4A. Full specification with pinout and replacement list

SW226NV Specs and Replacement

Type Designator: SW226NV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 270 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-251 TO-252

SW226NV substitution

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SW226NV datasheet

..1. Size:833K samwin
sw226nv.pdf pdf_icon

SW226NV SW226NV SAMWIN N-channel MOSFET BVDSS 600V IPAK DPAK Features ID 4.0A High ruggedness RDS(ON) 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 34nC) 2 1 Improved dv/dt Capability 2 2 1 3 3 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAM... See More ⇒

8.1. Size:479K samwin
sw226n.pdf pdf_icon

SW226N SAMWIN N-channel MOSFET TO-251 TO-252 BVDSS 600V Features ID 4.0A High ruggedness RDS(ON) 2.3ohm RDS(ON) (Max 2.3 )@VGS=10V 1 2 Gate Charge (Typical 30nC) 1 2 3 Improved dv/dt Capability 3 2 100% Avalanche Tested 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. ... See More ⇒

Detailed specifications: SWP630, SWF630, SWD630, SW1N60A, SW1N60C, SW1N60D, SW1N60E, SW226N, K4145, SW2N10, SW2N60, SW2N60A1, SW2N60B, SW2N60D, SW2N65, SW2N65B, SW2N70