SW226NV MOSFET. Datasheet pdf. Equivalent
Type Designator: SW226NV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-251 TO-252
SW226NV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SW226NV Datasheet (PDF)
sw226nv.pdf
SW226NVSW226NVSAMWINN-channel MOSFETBVDSS : 600VIPAKDPAKFeaturesID : 4.0A High ruggednessRDS(ON) : 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 34nC)21 Improved dv/dt Capability 22 13 3 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAM
sw226n.pdf
SW226NSAMWINN-channel MOSFETTO-251 TO-252BVDSS : 600VFeaturesID : 4.0A High ruggednessRDS(ON) : 2.3ohm RDS(ON) (Max 2.3 )@VGS=10V1 2 Gate Charge (Typical 30nC)123 Improved dv/dt Capability 32 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
