All MOSFET. SW226NV Datasheet

 

SW226NV Datasheet and Replacement


   Type Designator: SW226NV
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 270 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO-251 TO-252
 

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SW226NV Datasheet (PDF)

 ..1. Size:833K  samwin
 sw226nv.pdf pdf_icon

SW226NV

SW226NVSW226NVSAMWINN-channel MOSFETBVDSS : 600VIPAKDPAKFeaturesID : 4.0A High ruggednessRDS(ON) : 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 34nC)21 Improved dv/dt Capability 22 13 3 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAM

 8.1. Size:479K  samwin
 sw226n.pdf pdf_icon

SW226NV

SW226NSAMWINN-channel MOSFETTO-251 TO-252BVDSS : 600VFeaturesID : 4.0A High ruggednessRDS(ON) : 2.3ohm RDS(ON) (Max 2.3 )@VGS=10V1 2 Gate Charge (Typical 30nC)123 Improved dv/dt Capability 32 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.

Datasheet: SWP630 , SWF630 , SWD630 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SW226N , IRFB3607 , SW2N10 , SW2N60 , SW2N60A1 , SW2N60B , SW2N60D , SW2N65 , SW2N65B , SW2N70 .

History: CS334 | IRFHM8329TRPBF | STB19NB20-1 | FDMS86163P | ME2306N | IRFL214PBF | FDMC89521L

Keywords - SW226NV MOSFET datasheet

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