SW226NV Datasheet and Replacement
Type Designator: SW226NV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 270 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-251 TO-252
SW226NV substitution
SW226NV Datasheet (PDF)
sw226nv.pdf

SW226NVSW226NVSAMWINN-channel MOSFETBVDSS : 600VIPAKDPAKFeaturesID : 4.0A High ruggednessRDS(ON) : 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 34nC)21 Improved dv/dt Capability 22 13 3 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAM
sw226n.pdf

SW226NSAMWINN-channel MOSFETTO-251 TO-252BVDSS : 600VFeaturesID : 4.0A High ruggednessRDS(ON) : 2.3ohm RDS(ON) (Max 2.3 )@VGS=10V1 2 Gate Charge (Typical 30nC)123 Improved dv/dt Capability 32 100% Avalanche Tested1. Gate 2. Drain 3. Source1General Description3This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
Datasheet: SWP630 , SWF630 , SWD630 , SW1N60A , SW1N60C , SW1N60D , SW1N60E , SW226N , IRFB3607 , SW2N10 , SW2N60 , SW2N60A1 , SW2N60B , SW2N60D , SW2N65 , SW2N65B , SW2N70 .
History: SFS12R08PNF | STL70N10F3 | NTHS4101PT1G | FDZ375P | 2SK538 | 2SK3541MGP
Keywords - SW226NV MOSFET datasheet
SW226NV cross reference
SW226NV equivalent finder
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History: SFS12R08PNF | STL70N10F3 | NTHS4101PT1G | FDZ375P | 2SK538 | 2SK3541MGP



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