UPA1725G MOSFET Datasheet: N-Ch, 20V, 7A. Full specification with pinout and replacement list

UPA1725G Specs and Replacement

Type Designator: UPA1725G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: SOP-8

UPA1725G substitution

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UPA1725G datasheet

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1727 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 85 1, 2, 3 ; Source 4 ; Gate FEATURES 5, 6, 7, 8 ; Drain Single chip type Low on-state resistance RDS(on)1 = 14 m TYP. (VGS = 10 V... See More ⇒