UPA1725G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: UPA1725G
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Минимальное напряжение отсечки |Vgs(off)|: 0.5 V
Максимально допустимый постоянный ток стока |Id|: 7 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 9.6 nC
Время нарастания (tr): 120 ns
Выходная емкость (Cd): 310 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.021 Ohm
Тип корпуса: SOP-8
UPA1725G Datasheet (PDF)
upa1725g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1720 upa1720g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1724 upa1724g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1727 upa1727g.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1727SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1727 is N-Channel MOS Field Effect Transistordesigned for high current switching applications.851, 2, 3 ; Source4 ; GateFEATURES5, 6, 7, 8 ; Drain Single chip type Low on-state resistanceRDS(on)1 = 14 m TYP. (VGS = 10 V
upa1728 upa1728g.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1728SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1728 is N-Channel MOS Field Effect Transistordesigned for high current switching applications.8 51, 2, 3 ; Source4 ; GateFEATURES5, 6, 7, 8 ; Drain Single chip type Low on-state resistanceRDS(on)1 = 19 m TYP. (VGS = 10
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