UPA1816GR MOSFET Datasheet: P-Ch, 12V, 9A. Full specification with pinout and replacement list

UPA1816GR Specs and Replacement

Type Designator: UPA1816GR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 132 nS

Cossⓘ - Output Capacitance: 400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TSSOP-8

UPA1816GR substitution

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UPA1816GR datasheet

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DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1816 is a switching device which can be 85 driven directly by a 1.8 V power source. This device features a low on-state resistance and 1, 2, 3 Source excellent switching characteristics, and is suitable for 1.2 MAX. 4 G... See More ⇒

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

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DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1814 is a switching device which can be 85 driven directly by a 4 V power source. The PA1814 features a low on-state resistance and 1, 5, 8 Drain excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3,... See More ⇒