UPA1816GR - описание и поиск аналогов

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1816 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1816 is a switching device which can be 85 driven directly by a 1.8 V power source. This device features a low on-state resistance and 1, 2, 3 Source excellent switching characteristics, and is suitable for 1.2 MAX. 4 G

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1814 is a switching device which can be 85 driven directly by a 4 V power source. The PA1814 features a low on-state resistance and 1, 5, 8 Drain excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3,

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1819 is a switching device that can be driven 85 directly by a 4.0 V power source. This device features a low on-state resistance and 1 Drain1 1, 2, 3 Source excellent switching characteristics, and is suitable for 1.2