RFP14N06 Datasheet and Replacement

RFP14N06Data Sheet July 1999 File Number 4002.314A, 60V, 0.100 Ohm, N-Channel Power FeaturesMOSFET 14A, 60VThis N-Channel power MOSFET is manufactured using the rDS(ON) = 0.100MegaFET process. This process which uses feature sizes Temperature Compensating PSPICE Modelapproaching those of LSI integrated circuits, gives optimumutilization of silicon, resulting in

RFD14N06L, RFD14N06LSM, RFP14N06LData Sheet July 1999 File Number 4088.314A, 60V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, giveso

RFD14N05L, RFD14N05LSM, RFP14N05LData Sheet November 200414A, 50V, 0.100 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utili

RFD14N05, RFD14N05SM, RFP14N05Data Sheet January 200214A, 50V, 0.100 Ohm, N-Channel Power FeaturesMOSFETs 14A, 50VThese are N-channel power MOSFETs manufactured using rDS(ON) = 0.100the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI integrated circuits, gives optimum utilization of silicon