RFP14N06. Аналоги и основные параметры

Наименование производителя: RFP14N06

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 48 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 26 ns

Cossⓘ - Выходная емкость: 185 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.1 Ohm

Тип корпуса: TO220AB

Аналог (замена) для RFP14N06

- подборⓘ MOSFET транзистора по параметрам

 

RFP14N06 даташит

 ..1. Size:74K  intersil
 rfp14n06.pdf pdf_icon

RFP14N06

RFP14N06 Data Sheet July 1999 File Number 4002.3 14A, 60V, 0.100 Ohm, N-Channel Power Features MOSFET 14A, 60V This N-Channel power MOSFET is manufactured using the rDS(ON) = 0.100 MegaFET process. This process which uses feature sizes Temperature Compensating PSPICE Model approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in

 0.1. Size:83K  intersil
 rfd14n06l-sm rfp14n06l.pdf pdf_icon

RFP14N06

RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet July 1999 File Number 4088.3 14A, 60V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives o

 7.1. Size:207K  fairchild semi
 rfd14n05l rfd14n05lsm rfp14n05l.pdf pdf_icon

RFP14N06

RFD14N05L, RFD14N05LSM, RFP14N05L Data Sheet November 2004 14A, 50V, 0.100 Ohm, Logic Level, Features N-Channel Power MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utili

 7.2. Size:381K  fairchild semi
 rfd14n05-sm rfp14n05.pdf pdf_icon

RFP14N06

RFD14N05, RFD14N05SM, RFP14N05 Data Sheet January 2002 14A, 50V, 0.100 Ohm, N-Channel Power Features MOSFETs 14A, 50V These are N-channel power MOSFETs manufactured using rDS(ON) = 0.100 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon

ПОКАЗАТЬ ЕЩЁ

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