All MOSFET. UPA2464T1Q Datasheet

 

UPA2464T1Q MOSFET. Datasheet pdf. Equivalent


   Type Designator: UPA2464T1Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 5000 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: 8-HUSON

 UPA2464T1Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UPA2464T1Q Datasheet (PDF)

 ..1. Size:230K  renesas
upa2464t1q.pdf

UPA2464T1Q
UPA2464T1Q

Preliminary Data Sheet R07DS0189EJ0100 PA2464T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

 8.1. Size:226K  renesas
upa2462t1q.pdf

UPA2464T1Q
UPA2464T1Q

Preliminary Data Sheet R07DS0187EJ0100 PA2462T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2462T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2462T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

 8.2. Size:227K  renesas
upa2463t1q.pdf

UPA2464T1Q
UPA2464T1Q

Preliminary Data Sheet R07DS0188EJ0100 PA2463T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2463T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2463T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

 8.3. Size:211K  renesas
upa2465t1q.pdf

UPA2464T1Q
UPA2464T1Q

Preliminary Data Sheet R07DS0190EJ0100 PA2465T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top