Справочник MOSFET. UPA2464T1Q

 

UPA2464T1Q MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: UPA2464T1Q
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 0.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 7 nC
   trⓘ - Время нарастания: 5000 ns
   Cossⓘ - Выходная емкость: 77 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.026 Ohm
   Тип корпуса: 8-HUSON

 Аналог (замена) для UPA2464T1Q

 

 

UPA2464T1Q Datasheet (PDF)

 ..1. Size:230K  renesas
upa2464t1q.pdf

UPA2464T1Q
UPA2464T1Q

Preliminary Data Sheet R07DS0189EJ0100 PA2464T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

 8.1. Size:226K  renesas
upa2462t1q.pdf

UPA2464T1Q
UPA2464T1Q

Preliminary Data Sheet R07DS0187EJ0100 PA2462T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2462T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2462T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

 8.2. Size:227K  renesas
upa2463t1q.pdf

UPA2464T1Q
UPA2464T1Q

Preliminary Data Sheet R07DS0188EJ0100 PA2463T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2463T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2463T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

 8.3. Size:211K  renesas
upa2465t1q.pdf

UPA2464T1Q
UPA2464T1Q

Preliminary Data Sheet R07DS0190EJ0100 PA2465T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

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