Preliminary Data Sheet R07DS0189EJ0100 PA2464T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

Preliminary Data Sheet R07DS0187EJ0100 PA2462T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2462T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2462T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

Preliminary Data Sheet R07DS0188EJ0100 PA2463T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2463T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2463T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o

Preliminary Data Sheet R07DS0190EJ0100 PA2465T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o