JCS4N60B Specs and Replacement
Type Designator: JCS4N60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-262
JCS4N60B substitution
JCS4N60B Specs
jcs4n60f jcs4n60f jcs4n60v jcs4n60r jcs4n60b.pdf
R JCS4N60E JCS4N60E MAIN CHARACTERISTICS Package ID 4.0 A VDSS 600 V Rdson_max 2.35 Vgs=10V Qg-typ 11.8nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED LED power supply FEATURES Low ... See More ⇒
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60cb jcs4n60fb.pdf
N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson Vgs=10V 2.4 13.3nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS ... See More ⇒
jcs4n60vb jcs4n60rb jcs4n60bb jcs4n60sb jcs4n60cb jcs4n60fb.pdf
N R N-CHANNEL MOSFET JCS4N60B Package MAIN CHARACTERISTICS ID 4.0 A VDSS 600 V 2.4 Rdson Vgs=10V Qg 18.1nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge LED power su... See More ⇒
Detailed specifications: OSG55R190AF , OSG55R190DF , OSG55R190FF , OSG55R190PF , MDU2657 , JCS4N60V , JCS4N60R , JCS4N60S , IRF640 , JCS4N60C , JCS4N60F , CMP1405 , CMB1405 , UPA2701GR , UPA2702GR , UPA2706GR , UPA2707GR .
History: FDD3680
Keywords - JCS4N60B MOSFET specs
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