JCS4N60B MOSFET. Datasheet pdf. Equivalent
Type Designator: JCS4N60B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 27 nC
Rise Time (tr): 55 nS
Drain-Source Capacitance (Cd): 65 pF
Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm
Package: TO-262
JCS4N60B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
JCS4N60B Datasheet (PDF)
3.1. jcs4n60f.pdf 
Size:948K _update-mosfet
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N60 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 600 V VDSS Rdson 2.5Ω （@Vgs=10V） 27 nC Qg APPLICATIONS 用途 High efficiency switch 高频开关电源 mode power supplies 电子镇流器 Electronic lamp ballasts UPS 电源 based on half bridge UPS 产品特性
4.1. jcs4n65f-c-r-v.pdf Size:779K _update
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS4N65C 封装 Package 主要参数 MAIN CHARACTERISTICS 4.0 A ID 650 V VDSS Rdson（Vgs=10V） 2.5Ω 9nC Qg APPLICATIONS 用途 High frequency switching 高频开关电源 mode power supply 电子镇流器 Electronic ballast UPS 电源 UPS 产品特性 FEATURES 低栅极电荷
Datasheet: GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , IRF250 , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL , FDMS3604S , GWM100-01X1-SMD , FDMS3602AS , GWM120-0075X1-SL .
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