UPA2762UGR Datasheet. Specs and Replacement

Type Designator: UPA2762UGR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.9 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm

Package: SOP-8

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UPA2762UGR datasheet

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UPA2762UGR

Preliminary Data Sheet PA2762UGR R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 13.5 m MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 = 22 m MAX. (VGS = 4.5 V, ID = 10... See More ⇒

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upa2763.pdf pdf_icon

UPA2762UGR

Preliminary Data Sheet PA2763 R07DS0003EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A) ... See More ⇒

 8.2. Size:198K  renesas
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UPA2762UGR

Preliminary Data Sheet PA2761UGR R07DS0010EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A... See More ⇒

 8.3. Size:140K  renesas
upa2766t1a.pdf pdf_icon

UPA2762UGR

Data Sheet PA2766T1A N-channel MOSFET R07DS0883EJ0102 Rev.1.02 30 V , 130 A , 0.88 m Nov 28, 2012 Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4... See More ⇒

Detailed specifications: UPA2752GR, UPA2753GR, UPA2754GR, UPA2755AGR, UPA2755GR, UPA2756GR, UPA2757GR, UPA2761UGR, 18N50, UPA2763, UPA2764T1A, UPA2765T1A, UPA2766T1A, UPA2770GR, UPA2780GR, UPA2781GR, UPA2782GR

Keywords - UPA2762UGR MOSFET specs

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