RFP2N20 MOSFET Datasheet: N-Ch, 200V, 2A. Full specification with pinout and replacement list

RFP2N20 Specs and Replacement

Type Designator: RFP2N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 60 max pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm

Package: TO220AB

RFP2N20 substitution

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RFP2N20 datasheet

..1. Size:40K intersil
rfp2n20.pdf pdf_icon

RFP2N20 Data Sheet July 1999 File Number 2881.2 2A, 200V, 3.500 Ohm, N-Channel Power Features MOSFET 2A, 200V These are N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistors designed for applications such Symbol as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching D transi... See More ⇒

0.1. Size:342K fairchild semi
rfp2n20l.pdf pdf_icon

RFP2N20L Data Sheet January 2002 2A, 200V, 3.500 Ohm, Logic Level, Features N-Channel Power MOSFET 2A, 200V The RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500 power field effect transistor is specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, autom... See More ⇒

0.2. Size:87K njs
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