RFP2N20Data Sheet July 1999 File Number 2881.22A, 200V, 3.500 Ohm, N-Channel Power FeaturesMOSFET 2A, 200VThese are N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistors designed for applications suchSymbolas switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switchingDtransi

RFP2N20LData Sheet January 20022A, 200V, 3.500 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 2A, 200VThe RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistor is specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, autom

RFP2N08L, RFP2N10LData Sheet July 1999 File Number 2872.22A, 80V and 100V, 1.050 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 2A, 80V and 100VThe RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drivesdesigned for use with logic level (5V) driving sources i